Power MOSFET, P Channel, 100 V, 40 A, 0.06 ohm, TO-220AB, Through Hole

Product Overview
The IRF5210PBF is a P-channel HEXFET® Power MOSFET. This HEXFET® power MOSFET utilizes advance processing techniques to achieve extremely low 0n-resistance per silicon area.

Advanced Process Technology
New Ultra Low On-Resistance
Fast Switching
Dynamic dv/dt Rating
Fully Avalanche Rated

Applications
Audio, Industrial

Product Information

Channel Type: P Channel
Transistor Polarity: P Channel
Drain Source Voltage Vds: 100V
Continuous Drain Current Id: 40A
Drain Source On State Resistance: 0.06ohm
On Resistance Rds(on): 0.06ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 200W
Power Dissipation: 200W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet