Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

Product Overview
The IRFB3206PBF is a HEXFET single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.

Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability
Halogen-free

Applications
Power Management, Motor Drive & Control

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 210A
Drain Source Voltage Vds: 60V
Drain Source On State Resistance: 0.003ohm
On Resistance Rds(on): 0.003ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 300W
Transistor Case Style: TO-220AB
Power Dissipation: 300W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet