Power MOSFET, N Channel, 40 V, 195 A, 0.00125 ohm, TO-220AB, Through Hole

Product Overview
The IRFB7434PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, DC-to-AC inverters, DC-to-DC and AC-to-DC converters.

Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

Applications
Motor Drive & Control, Power Management, Consumer Electronics

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 195A
Drain Source Voltage Vds: 40V
Drain Source On State Resistance: 0.00125ohm
On Resistance Rds(on): 0.00125ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 294W
Transistor Case Style: TO-220AB
Power Dissipation: 294W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
MSL: MSL 1 - Unlimited

What's in the box
1 x Single Power Mosfet