Power MOSFET, N Channel, 60 V, 195 A, 0.0021 ohm, TO-247AC, Through Hole

Product Overview
The IRFP3006PBF is a HEXFET® N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.

Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and di/dt capability

Applications
Power Management, Industrial

Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 195A
Drain Source Voltage Vds: 60V
Drain Source On State Resistance: 0.0021ohm
On Resistance Rds(on): 0.0021ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 375W
Transistor Case Style: TO-247AC
Power Dissipation: 375W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet