Power MOSFET, N Channel, 250 V, 33 A, 0.094 ohm, TO-220, Through Hole

Product Overview
The FDP33N25 is an UniFET™ N-channel high voltage MOSFET produced based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

100% avalanche tested
36.8nC typical low gate charge
39pF typical low Crss

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 33A
Drain Source Voltage Vds: 250V
Drain Source On State Resistance: 0.094ohm
On Resistance Rds(on): 0.094ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 5V
Power Dissipation Pd: 235W
Transistor Case Style: TO-220
Power Dissipation: 235W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet