Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole
Product Overview
The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
Drain to source voltage (Vds) is 200V
Gate to source voltage of ±20V
Continuous drain current (Id) is 9A
Power dissipation (Pd) is 75W
Operating junction temperature range from -65°C to 150°C
Gate threshold voltage of 3V
Low on state resistance of 350mohm at Vgs 10V
Applications
Power Management, Consumer Electronics, Portable Devices, Industrial
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 9A
Drain Source Voltage Vds: 200V
Drain Source On State Resistance: 0.4ohm
On Resistance Rds(on): 0.4ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 100W
Transistor Case Style: TO-220
Power Dissipation: 100W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
