Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through Hole
Product Overview
The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
Critical DC electrical parameters specified at elevated temperature
High density cell design for extremely low RDS (ON)
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 48A
Drain Source Voltage Vds: 60V
Drain Source On State Resistance: 0.025ohm
On Resistance Rds(on): 0.025ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 2.9V
Power Dissipation Pd: 100W
Transistor Case Style: TO-220AB
Power Dissipation: 100W
No. of Pins: 3Pins
Operating Temperature Max: 175°C
What's in the box
1 x Single Power Mosfet
