Power MOSFET, N Channel, 600 V, 10 A, 0.53 ohm, TO-252 (DPAK), Surface Mount
Product Overview
The STD10NM60N is a MDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This Power MOSFET is developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest ON-resistance. It is therefore suitable for the most demanding high efficiency converters.
100% Avalanche tested
Low gate input resistance
Applications
Industrial, Power Management
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 10A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.53ohm
On Resistance Rds(on): 0.53ohm
Transistor Case Style: TO-252 (DPAK)
Rds(on) Test Voltage: 10V
Transistor Mounting: Surface Mount
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 70W
Power Dissipation: 70W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
MSL: MSL 1 - Unlimited
What's in the box
1 x Single Power Mosfet
