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Stmicroelectronics (STP20NM60FP) Power MOSFET, N Channel, 600 V, 20 A

Stmicroelectronics (STP20NM60FP) Power MOSFET, N Channel, 600 V, 20 A

0.25 ohm, TO-220FP, Through Hole
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R 111.00R 120.40
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0.25 ohm, TO-220FP, Through Hole

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6-Month Limited Warranty.
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Product Information

SKU92204432
Stock StatusIn Stock
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Power MOSFET, N Channel, 600 V, 20 A, 0.25 ohm, TO-220FP, Through Hole

Product Overview
The STP20NM60FP is an N-channel MDmesh™ Power MOSFET has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

100% Avalanche tested
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 20A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.25ohm
On Resistance Rds(on): 0.25ohm
Rds(on) Test Voltage: 30V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 45W
Transistor Case Style: TO-220FP
Power Dissipation: 45W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

Power MOSFET, N Channel, 600 V, 20 A, 0.25 ohm, TO-220FP, Through Hole

Product Overview
The STP20NM60FP is an N-channel MDmesh™ Power MOSFET has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESH™ horizontal layout. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.

100% Avalanche tested
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
Low gate input resistance

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 20A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.25ohm
On Resistance Rds(on): 0.25ohm
Rds(on) Test Voltage: 30V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 45W
Transistor Case Style: TO-220FP
Power Dissipation: 45W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

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