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Stmicroelectronics (STP6NK60ZFP) Power MOSFET, N Channel, 600 V, 6 A

Stmicroelectronics (STP6NK60ZFP) Power MOSFET, N Channel, 600 V, 6 A

1.2 ohm, TO-220FP, Through Hole
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R 87.00R 90.61
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1.2 ohm, TO-220FP, Through Hole

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Warranty
6-Month Limited Warranty.
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Hassle-Free Exchanges & Returns for 7 Days.

Product Information

SKU92204433
Stock StatusIn Stock
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Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole

Product Overview
The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

Extremely high dv/dt capability
100% Avalanche tested
Gate charge minimized

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 6A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 1.2ohm
On Resistance Rds(on): 1.2ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3.75V
Power Dissipation Pd: 32W
Transistor Case Style: TO-220FP
Power Dissipation: 32W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

Power MOSFET, N Channel, 600 V, 6 A, 1.2 ohm, TO-220FP, Through Hole

Product Overview
The STP6NK60ZFP is a 600V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

Extremely high dv/dt capability
100% Avalanche tested
Gate charge minimized

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 6A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 1.2ohm
On Resistance Rds(on): 1.2ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3.75V
Power Dissipation Pd: 32W
Transistor Case Style: TO-220FP
Power Dissipation: 32W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

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