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Stmicroelectronics (STP9NK50Z) Power MOSFET, N Channel, 500 V, 7.2 A

Stmicroelectronics (STP9NK50Z) Power MOSFET, N Channel, 500 V, 7.2 A

0.72 ohm, TO-220, Through Hole
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R 75.00R 83.44
🚚 Ships in 9-11 work days

0.72 ohm, TO-220, Through Hole

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Warranty
6-Month Limited Warranty.
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Hassle-Free Exchanges & Returns for 7 Days.

Product Information

SKU92204434
Stock StatusIn Stock
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Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220, Through Hole

Product Overview
The STP9NK50Z is a SuperMESH N-channel Zener-protected MOSFET obtained through an extreme optimization of well-established strip-based PowerMESH layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.

0.72R RDS (ON)
Extremely high dV/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
-55 to 150°C Operating junction temperature range

Applications
Power Management, Lighting, Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 7.2A
Drain Source Voltage Vds: 500V
Drain Source On State Resistance: 0.72ohm
On Resistance Rds(on): 0.72ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3.75V
Power Dissipation Pd: 110W
Transistor Case Style: TO-220
Power Dissipation: 110W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

Power MOSFET, N Channel, 500 V, 7.2 A, 0.72 ohm, TO-220, Through Hole

Product Overview
The STP9NK50Z is a SuperMESH N-channel Zener-protected MOSFET obtained through an extreme optimization of well-established strip-based PowerMESH layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications.

0.72R RDS (ON)
Extremely high dV/dt capability
100% Avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
-55 to 150°C Operating junction temperature range

Applications
Power Management, Lighting, Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 7.2A
Drain Source Voltage Vds: 500V
Drain Source On State Resistance: 0.72ohm
On Resistance Rds(on): 0.72ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3.75V
Power Dissipation Pd: 110W
Transistor Case Style: TO-220
Power Dissipation: 110W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet

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