Power MOSFET, N Channel, 600 V, 20 A, 0.135 ohm, TO-247, Through Hole
Product Overview
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
100% Avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Applications
Industrial
Product Information
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 20A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.135ohm
On Resistance Rds(on): 0.135ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 140W
Transistor Case Style: TO-247
Power Dissipation: 140W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
What's in the box
1 x Single Power Mosfet
