Power MOSFET, N Channel, 400 V, 5.5 A, 1 ohm, TO-220AB, Through Hole

Product Overview
The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.

Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche voltage and current
Effective COSS specified
Simple drive requirements

Applications
Industrial, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 5.5A
Drain Source Voltage Vds: 400V
Drain Source On State Resistance: 1ohm
On Resistance Rds(on): 1ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4.5V
Power Dissipation Pd: 74W
Transistor Case Style: TO-220AB
Power Dissipation: 74W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet