Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole

Product Overview
The IRF840APBF is a N-channel Power MOSFET with low gate charge and improved gate, avalanche and dynamic dv/dt ruggedness.
Fully characterized capacitance and avalanche voltage and current
Effective Coss specified
±30V Gate-source voltage

Applications
Power Management, Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 500V
Continuous Drain Current Id: 8A
Drain Source On State Resistance: 0.85ohm
On Resistance Rds(on): 0.85ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 125W
Power Dissipation: 125W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet