Power MOSFET, N Channel, 1 kV, 1.3 A, 11.5 ohm, TO-220AB, Through Hole

Product Overview
The IRFBG20PBF is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. The package is universally preferred at power dissipation levels to approximately 50W. The low thermal contribute to its wide acceptance throughout the industry.

Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Simple drive requirements

Applications
Industrial, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 1.3A
Drain Source Voltage Vds: 1kV
Drain Source On State Resistance: 11.5ohm
On Resistance Rds(on): 11.5ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 50W
Transistor Case Style: TO-220AB
Power Dissipation: 50W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Power MOSFET