Power MOSFET, N Channel, 60 V, 30 A, 0.05 ohm, TO-220AB, Through Hole

Product Overview
The IRFZ34PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.

Dynamic dV/dt rating
-55 to 175°C Operating temperature range
Ease of paralleling
Simple drive requirements

Applications
Industrial, Power Management, Commercial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 30A
Drain Source Voltage Vds: 60V
Drain Source On State Resistance: 0.05ohm
On Resistance Rds(on): 0.05ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 88W
Transistor Case Style: TO-220AB
Power Dissipation: 88W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet