Vishay (IRL530PBF) Power MOSFET, N Channel, 100 V, 14 A, 0.16 ohm

Vishay (IRL530PBF) Power MOSFET, N Channel, 100 V, 14 A, 0.16 ohm

TO-220AB, Through Hole
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R 68.60
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TO-220AB, Through Hole

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Product Information

SKU92204315
Stock StatusIn Stock
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Power MOSFET, N Channel, 100 V, 14 A, 0.16 ohm, TO-220AB, Through Hole

Product Overview
The IRL530PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.

Dynamic dv/dt rating
Repetitive avalanche rated
Logic-level gate drive
Fast switching
Ease of paralleling
±10V Gate to source voltage
1.7°C/W Thermal resistance, junction to case
62°C/W Thermal resistance, junction to ambient

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 14A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.16ohm
On Resistance Rds(on): 0.16ohm
Rds(on) Test Voltage: 5V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 2V
Power Dissipation Pd: 79W
Transistor Case Style: TO-220AB
Power Dissipation: 79W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet

Power MOSFET, N Channel, 100 V, 14 A, 0.16 ohm, TO-220AB, Through Hole

Product Overview
The IRL530PBF is a 100V N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The low thermal resistance contributes to its wide acceptance throughout the industry.

Dynamic dv/dt rating
Repetitive avalanche rated
Logic-level gate drive
Fast switching
Ease of paralleling
±10V Gate to source voltage
1.7°C/W Thermal resistance, junction to case
62°C/W Thermal resistance, junction to ambient

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 14A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.16ohm
On Resistance Rds(on): 0.16ohm
Rds(on) Test Voltage: 5V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 2V
Power Dissipation Pd: 79W
Transistor Case Style: TO-220AB
Power Dissipation: 79W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet