Infineon (SPW47N60C3FKSA1) Power MOSFET, N Channel, 650 V, 47 A, 0.07 ohm

Power MOSFET, N Channel, 650 V, 47 A, 0.07 ohm, TO-247, Through Hole

Product Overview
The SPW47N60C3 is a 650V N-channel CoolMOS Power MOSFET with low specific on-state resistance. The CoolMOS MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

Very low energy storage in output capacitance (Eoss) at 400V
Low gate charge (Qg)
High efficiency and power density
Outstanding performance
High reliability
Easy to use

Applications
Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 650V
Continuous Drain Current Id: 47A
Drain Source On State Resistance: 0.07ohm
On Resistance Rds(on): 0.07ohm
Transistor Case Style: TO-247
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 415W
Power Dissipation: 415W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What’s in the box
1 x Single Power Mosfet