Onsemi (BDX33CG) Bipolar (BJT) Single Transistor, Darlington, NPN, 100 V

Product Overview
The BDX33CG is a 10A PNP bipolar power Darlington Transistor designed for general purpose and low speed switching applications.
Complementary device
Monolithic construction with built-in base emitter shunt resistors
Low collector-emitter saturation voltage VCE(sat) = 2.5VDC maximum at IC = 3A DC

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 100V
Transition Frequency ft: –
Power Dissipation Pd: 70W
DC Collector Current: 10A
DC Current Gain hFE: 750hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-220
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
1 x Onsemi (BDX33CG) Bipolar (BJT) Single Transistor