Product Overview
The MJ11028G is an NPN Complementary Silicon Darlington Power Transistor for use as output devices in complementary general purpose amplifier applications. This transistor features monolithic construction with built-in base-emitter shunt resistor.
High DC current gain
Diode protection to rated IC
Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 60V
Transition Frequency ft: –
Power Dissipation Pd: 300W
DC Collector Current: 50A
DC Current Gain hFE: 400hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-204
No. of Pins: 2Pins
Operating Temperature Max: 200°C
Product Range: –
Automotive Qualification Standard: –
MSL: –
What’s in the box
1 x Onsemi (MJ11028G) Bipolar (BJT) Single Transistor
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