Dual Power IC, High Side And Low Side, 10V-20V Supply, 420mA Out, 105ns Delay, DIP-14

Product Overview
The IR2112PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction.
Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600V.
Floating channel designed for bootstrap operation
Tolerant to negative transient voltage DV/DT Immune
Under-voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Cycle-by-cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs

Applications
Industrial, Consumer Electronics, Alternative Energy, Power Management

Product Information

No. of Channels: 2Channels
Driver Configuration: High Side and Low Side
Power Switch Type: IGBT, MOSFET
Supply Voltage Min: 10V
Supply Voltage Max: 20V
Driver Case Style: DIP
Input Type: Non-Inverting
IC Case / Package: DIP
No. of Pins: 14Pins
Source Current: 250mA
Input Delay: 125ns
Output Delay: 105ns
Sink Current: 500mA
Operating Temperature Min: -40°C
Operating Temperature Max: 125°C

What's in the box
1 x Dual Power IC