Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole

Product Overview
The IRF5305PBF is -55V single P channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

Drain to source voltage Vds is -55V
Gate to source voltage is ±20V
On resistance Rds(on) of 60mohm at Vgs of -10V
Power dissipation Pd of 110W at 25°C
Continuous drain current Id of -31A at Vgs -10V and 25°C
Junction temperature range from -55°C to 175°C

Product Information

Channel Type: P Channel
Transistor Polarity: P Channel
Drain Source Voltage Vds: 55V
Continuous Drain Current Id: 31A
Drain Source On State Resistance: 0.06ohm
On Resistance Rds(on): 0.06ohm
Transistor Case Style: TO-220AB
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 110W
Power Dissipation: 110W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet