Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole

Product Overview
The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters.

Fully characterized capacitance including effective COSS to simplify design
Fully characterized avalanche voltage and current
Dynamic dV/dt rating
Fast switching
Fully avalanche rating

Applications
Power Management, Motor Drive & Control

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 80A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.015ohm
On Resistance Rds(on): 0.015ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 260W
Transistor Case Style: TO-220AB
Power Dissipation: 260W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet