Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole

Product Overview
The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.

Drain to source voltage (Vds) of 200V
Gate to source voltage of ±20V
On resistance Rds(on) of 40mohm at Vgs 10V
Power dissipation Pd of 300W at 25°C
Continuous drain current Id of 50A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 50A
Drain Source Voltage Vds: 200V
Drain Source On State Resistance: 0.04ohm
On Resistance Rds(on): 0.04ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 300W
Transistor Case Style: TO-247AC
Power Dissipation: 300W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet