Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole

Product Overview
The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology.

175°C Operating temperature
Dynamic dV/dt rating
Fully avalanche rated

Applications
Power Management

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 57A
Drain Source Voltage Vds: 100V
Drain Source On State Resistance: 0.025ohm
On Resistance Rds(on): 0.025ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 200W
Transistor Case Style: TO-247AC
Power Dissipation: 200W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet