RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

Product Overview
These devices are designed for use in VHF/UHF communications, VHF TV broadcast and aerospace applications as well as industrial, scientific and medical applications. The devices are exceptionally rugged and exhibit high performance up to 250 MHz.

Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
Characterized from 30 to 50 V
Suitable for linear application
Integrated ESD protection with greater negative gate-source voltage range for improved Class C operation
Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Applications
Industrial, Communications & Networking

Product Information
Drain Source Voltage Vds: 133V
Power Dissipation: 182W
Power Dissipation Pd: 182W
Operating Frequency Min: 1.8MHz
Operating Frequency Max: 250MHz
Transistor Case Style: TO-220
RF Transistor Case: TO-220
No. of Pins: 3Pins
Operating Temperature Max: 175°C
Product Range: MRF101AN; MRF101BN

What's in the box
1 x RF FET Transistor