Power MOSFET, N Channel, 600 V, 23.5 A, 0.24 ohm, TO-3P, Through Hole

Product Overview
The FQA24N60 is a 600V N-channel QFET® enhancement mode Power MOSFET is produced using planar stripe and DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. This device is well suited for high efficient switched mode power supplies, active power factor correction and electronic lamp ballast based on half bridge topology. This product is general usage and suitable for many different applications.

Low gate charge
100% avalanche tested

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 23.5A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.24ohm
On Resistance Rds(on): 0.24ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 5V
Power Dissipation Pd: 310W
Transistor Case Style: TO-3P
Power Dissipation: 310W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet