Product Overview
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
Collector to emitter voltage (Vce) of -120V
Collector current (Ic) of -30A
Power dissipation of 200W
Operating junction temperature range from -55°C to 200°C
Collector emitter breakdown Voltage of -120V
Collector emitter saturation voltage of -3V at 20A collector current

Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Product Information

Transistor Polarity: PNP
Collector Emitter Voltage V(br)ceo: 120V
DC Collector Current: 30A
Power Dissipation Pd: 200W
Transistor Case Style: TO-3
Transistor Mounting: Through Hole
No. of Pins: 2Pins
Transition Frequency ft: -
DC Current Gain hFE: 1000hFE
Operating Temperature Max: 200°C
Product Range: -
Automotive Qualification Standard: -
MSL: -

What's in the box
1 x Onsemi (MJ11015G) Bipolar (BJT) Single Transistor