Power MOSFET, P Channel, 200 V, 1.75 A, 3 ohm, TO-220AB, Through Hole

Product Overview
The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

Dynamic dV/dt rating
Fast switching
150°C Operating temperature
Easy to parallel
Simple drive requirement

Applications
Power Management

Product Information

Channel Type: P Channel
Transistor Polarity: P Channel
Continuous Drain Current Id: 1.75A
Drain Source Voltage Vds: 200V
Drain Source On State Resistance: 3ohm
On Resistance Rds(on): 3ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 20W
Transistor Case Style: TO-220AB
Power Dissipation: 20W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet