Power MOSFET, N Channel, 1 kV, 3.1 A, 5 ohm, TO-220AB, Through Hole

Product Overview
The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.
Dynamic dV/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
175°C Operating Temperature

Applications
Audio, Signal Processing, Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 3.1A
Drain Source Voltage Vds: 1kV
Drain Source On State Resistance: 5ohm
On Resistance Rds(on): 5ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 125W
Transistor Case Style: TO-220AB
Power Dissipation: 125W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What's in the box
1 x Single Power Mosfet