Power MOSFET, N Channel, 60 V, 50 A, 0.028 ohm, TO-220AB, Through Hole

Product Overview
The IRFZ44RPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.

Advanced process technology
Ultra-low ON-resistance
Dynamic dV/dt rating
-55 to 175°C Operating temperature range
Fully avalanche rated

Applications
Industrial, Power Management, Audio

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 50A
Drain Source Voltage Vds: 60V
Drain Source On State Resistance: 0.028ohm
On Resistance Rds(on): 0.028ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 150W
Transistor Case Style: TO-220AB
Power Dissipation: 150W
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What's in the box
1 x Single Power Mosfet