Wolfsppeed (C2M1000170D) Silicon Carbide MOSFET, Single, N Channel, 4.9 A

Silicon Carbide MOSFET, Single, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, TO-247

Product Overview
The C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, ultra low drain gate capacitance, higher system efficiency, reduced cooling requirements and increased system reliability. Applications include auxiliary power supplies, switch mode power supplies and high voltage capacitive loads.

Drain to source voltage (Vds) of 1.7kV
Continuous drain current of 5A
Power dissipation of 69W
Operating junction temperature of -55°C to 150°C
Low on state resistance of 1ohm at Vgs of 20V

Applications
Power Management, Consumer Electronics, Portable Devices, Industrial

Product Information

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 4.9A
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1.7kV
On Resistance Rds(on): 0.95ohm
Drain Source On State Resistance: 0.95ohm
Rds(on) Test Voltage: 20V
Transistor Case Style: TO-247
Gate Source Threshold Voltage Max: 2.4V
Power Dissipation Pd: 69W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Power Dissipation: 69W

What’s in the box
1 x Silicon Carbide MOSFET