Bipolar (BJT) Single Transistor, PNP, 60 V, 10 A, 75 W, TO-220, Through Hole
Product Overview
The MJE2955T is a -60V Silicon Epitaxial Base PNP Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.
Complementary to the MJE3055T
Well-controlled hFE parameter for increased reliability
Product Information
Transistor Polarity: PNP
Collector Emitter Voltage V(br)ceo: 60V
Transition Frequency ft: 2MHz
Power Dissipation Pd: 75W
DC Collector Current: 10A
DC Current Gain hFE: 20hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-220
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –
What’s in the box
1 x STMicroelectronics (MJE2955T) Bipolar (BJT) Single Transistor
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