Infineon (BFP450H6327XTSA1) Bipolar – RF Transistor, NPN, 4.5 V, 24 GHz

Bipolar – RF Transistor, NPN, 4.5 V, 24 GHz, 500 mW, 170 mA, SOT-343

Product Overview
The BFP 450 H6327 is a NPN wideband Bipolar RF Transistor with its high linearity at currents as low as 50mA the device supports energy efficient designs. The typical transition frequency is approximately 24GHz, hence the device offers high power gain at frequencies up to 3GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.
Low noise transistor
Based on Infineon ?s reliable very high volume 25GHz silicon bipolar technology
Halogen-free

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 4.5V
Transition Frequency ft: 24GHz
Power Dissipation Pd: 500mW
DC Collector Current: 170mA
DC Current Gain hFE: 95hFE
RF Transistor Case: SOT-343
No. of Pins: 4Pins
Operating Temperature Max: 150°C
Transistor Mounting: Surface Mount
Product Range: –
Automotive Qualification Standard: AEC-Q101
MSL: MSL 1 – Unlimited

What’s in the box
1 x Infineon (BFP450H6327XTSA1) Bipolar – RF Transistor