Infineon (IKW40N120H3FKSA1) IGBT, 40 A, 2.4 V, 483 W, 1.2 kV

Product Overview
The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

Low switching losses for high efficiency
Fast switching behaviour with low EMI emissions
Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
Short circuit capability
Excellent performance
Low switching and conduction losses

Applications
Power Management, Alternative Energy

Product Information

Continuous Collector Current: 40A
Collector Emitter Saturation Voltage: 2.4V
Power Dissipation: 483W
Collector Emitter Voltage Max: 1.2kV
Transistor Case Style: TO-247
No. of Pins: 3Pins
Operating Temperature Max: 175°C

What’s in the box
1 x Single IGBT