Infineon (IPW60R041P6FKSA1) Power MOSFET, N Channel, 600 V, 77.5 A

Power MOSFET, N Channel, 600 V, 77.5 A, 0.037 ohm, TO-247, Through Hole

Product Overview
600V CoolMOS™ P6 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS.

Increased MOSFET dv/dt ruggedness
Extremely low losses due to very low FOM Rdson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
Halogen free moulded compound
Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 77.5A
Drain Source Voltage Vds: 600V
Drain Source On State Resistance: 0.037ohm
On Resistance Rds(on): 0.037ohm
Rds(on) Test Voltage: 10V
Transistor Mounting: Through Hole
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 481W
Transistor Case Style: TO-247
Power Dissipation: 481W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: CoolMOS P6

What’s in the box
1 x Single Power Mosfet