Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor, PNP, 100V, 4.1A

Bipolar (BJT) Single Transistor, PNP, 100 V, 4.1 A, 700 mW, SOT-223, Surface Mount

Product Overview
The PBSS306PZ,135 is a 4.1A PNP breakthrough-in small signal (BISS) Transistor in a small surface-mount plastic package with increases heat-sink.
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
High efficiency due to less heat generation
Smaller printed-circuit board (PCB) area than for conventional transistors
AEC-Q101 qualified
NPN complement is PBSS306NZ
S306PZ Marking code

Product Information
Transistor Polarity: PNP
Collector Emitter Voltage V(br)ceo: 100V
DC Collector Current: 4.1A
Transition Frequency ft: 100MHz
Power Dissipation Pd: 700mW
DC Current Gain hFE: 300hFE
Transistor Mounting: Surface Mount
Transistor Case Style: SOT-223
No. of Pins: 4Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: MSL 1 – Unlimited

What’s in the box
1 x Nexperia (PBSS306PZ,135) Bipolar (BJT) Single Transistor