Onsemi (MJE3055TG) Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A

Product Overview
The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices.
DC current gain specified to 10A
High current gain – bandwidth
70VDC Collector to base voltage (VCBO)
5V Emitter to base voltage (VEBO)
6ADC Base current (IB)
1.67°C/W Thermal resistance, junction to case

Applications
Industrial

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 60V
Transition Frequency ft: 2MHz
Power Dissipation Pd: 75W
DC Collector Current: 10A
DC Current Gain hFE: 5hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-220
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
1 x Onsemi (MJE3055TG) Bipolar (BJT) Single Transistor