Onsemi (TIP142G) Bipolar (BJT) Single Transistor, NPN, 100 V, 10 A

Product Overview
The TIP142G is a 100V NPN complementary silicon Darlington Power Transistor designed for general purpose amplifier and low frequency switching applications. It has monolithic construction with built-in base-emitter shunt resistor. The TIP142 (NPN) and TIP147 (PNP) are complementary devices.
High DC current gain
100VDC Minimum collector-emitter sustaining voltage (VCEO (sus))
100VDC Collector to base voltage (VCBO)
5VDC Emitter to base voltage (VEBO)
1°C/W Thermal resistance, junction to case
35.7°C/W Thermal resistance, junction to ambient

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 100V
Transition Frequency ft: –
Power Dissipation Pd: 125W
DC Collector Current: 10A
DC Current Gain hFE: 500hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-247
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
1 x Onsemi (TIP142G) Bipolar (BJT) Single Transistor