Product Overview
The TIP3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications.
Excellent safe operating area
DC Current gain(hFE = 20 to 70 at Ic = 4ADC)
Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC)
Applications
Industrial, Power Management
Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 60V
Transition Frequency ft: 2.5MHz
Power Dissipation Pd: 90W
DC Collector Current: 15A
DC Current Gain hFE: 5hFE
Transistor Mounting: Through Hole
Transistor Case Style: TO-247
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: TIPxxx
Automotive Qualification Standard: –
MSL: –
What’s in the box
1 x Onsemi (TIP3055G) Bipolar (BJT) Single Transistor
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