STMicroelectronics (BD139) Bipolar (BJT) Single Transistor, NPN, 80V, 1.5A

Bipolar (BJT) Single Transistor, NPN, 80 V, 1.5 A, 1.25 W, TO-126, Through Hole

Product Overview
The BD139 is a NPN complementary low voltage NPN transistor in 3 pin SOT-32 package. This device is designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits.
Products are pre-selected in DC current gain
Collector to emitter voltage (Vce) is 80V
Collector current (Ic) is 1.5A
Power dissipation (Pd) is 12.5W
Collector to emitter saturation voltage of 500mV at 0.5A collector current
DC current gain (hFE) of 25 at 0.5A collector current
Operating junction temperature range from 150°C

Applications
Power Management, Consumer Electronics, Portable Devices, Industrial

Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 80V
DC Collector Current: 1.5A
Power Dissipation Pd: 1.25W
Transistor Case Style: TO-126
Transistor Mounting: Through Hole
No. of Pins: 3Pins
Transition Frequency ft: –
DC Current Gain hFE: 40hFE
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: –

What’s in the box
5 x STMicroelectronics (BD139) Bipolar (BJT) Single Transistors