Stmicroelectronics (SCT20N120) Silicon Carbide MOSFET, Single, 20 A, 1.2 kV

Silicon Carbide MOSFET, Single, 20 A, 1.2 kV, 0.169 ohm, HiP247

Product Information

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 20A
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1.2kV
On Resistance Rds(on): 0.169ohm
Drain Source On State Resistance: 0.169ohm
Rds(on) Test Voltage: 20V
Transistor Case Style: HiP247
Gate Source Threshold Voltage Max: 3.5V
Power Dissipation Pd: 175W
No. of Pins: 3Pins
Operating Temperature Max: 200°C
Power Dissipation: 175W

What’s in the box
1 x Silicon Carbide MOSFET