Stmicroelectronics (SCT30N120) Silicon Carbide MOSFET, Single, 40 A

Silicon Carbide MOSFET, Single, 40 A, 1.2 kV, 0.08 ohm, HiP247

Product Overview
The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications.

Very tight variation of on-resistance vs. temperature
Slight variation of switching losses vs. temperature
Very high operating temperature capability (200°C)
Very fast and robust intrinsic body diode
Low capacitance

Applications
Industrial, Power Management

Product Information

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 40A
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1.2kV
On Resistance Rds(on): 0.08ohm
Drain Source On State Resistance: 0.08ohm
Rds(on) Test Voltage: 20V
Transistor Case Style: HiP247
Gate Source Threshold Voltage Max: 2.6V
Power Dissipation Pd: 270W
No. of Pins: 3Pins
Operating Temperature Max: 200°C
Power Dissipation: 270W
MSL: MSL 1 – Unlimited

What’s in the box
1 x Silicon Carbide MOSFET