Stmicroelectronics (SCTW60N120G2) Silicon Carbide MOSFET, Single, 60 A

Silicon Carbide MOSFET, Single, 60 A, 1.2 kV, 0.035 ohm, HiP247

Product Information

MOSFET Module Configuration: Single
Channel Type: N Channel
Transistor Polarity: N Channel
Continuous Drain Current Id: 60A
Drain Source Voltage Vds: 1.2kV
Drain Source On State Resistance: 0.035ohm
On Resistance Rds(on): 0.035ohm
Transistor Case Style: HiP247
No. of Pins: 3Pins
Rds(on) Test Voltage: 18V
Gate Source Threshold Voltage Max: 3V
Power Dissipation Pd: 389W
Power Dissipation: 389W
Operating Temperature Max: 200°C

What’s in the box
1 x Silicon Carbide MOSFET