Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A, 80 W, TO-263 (D2PAK), Surface Mount
Product Overview
The STB13007DT4 is a NPN fast-switching Power Transistor manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure to enhance switching speeds. Improved specification offers lower leakage current, tighter gain range, DC current gain pre-selection and tighter storage time range.
Integrated free-wheeling diode
Low spread of dynamic parameters
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Large RBSOA
In compliance with the 2002/93/EC European directive
Product Information
Transistor Polarity: NPN
Collector Emitter Voltage V(br)ceo: 400V
Transition Frequency ft: –
Power Dissipation Pd: 80W
DC Collector Current: 8A
DC Current Gain hFE: 18hFE
Transistor Mounting: Surface Mount
Transistor Case Style: TO-263 (D2PAK)
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Product Range: –
Automotive Qualification Standard: –
MSL: MSL 1 – Unlimited
What’s in the box
1 x STMicroelectronics (STB13007DT4) Bipolar Single Transistor
Reviews
There are no reviews yet.