Stmicroelectronics (STW4N150) Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm

Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole

Product Overview
The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today’s challenging efficiency requirements.

100% Avalanche tested
Intrinsic capacitances and Qg minimized
High speed switching

Applications
Industrial

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1.5kV
Continuous Drain Current Id: 4A
Drain Source On State Resistance: 7ohm
On Resistance Rds(on): 7ohm
Transistor Case Style: TO-247
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 4V
Power Dissipation Pd: 160W
Power Dissipation: 160W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What’s in the box
1 x Single Power Mosfet