Toshiba (TK100L60W,VQ(O) Power MOSFET, N Channel, 600 V, 100 A, 0.015 ohm

Power MOSFET, N Channel, 600 V, 100 A, 0.015 ohm, TO-3P, Through Hole

Product Information

Channel Type: N Channel
Transistor Polarity: N Channel
Drain Source Voltage Vds: 600V
Continuous Drain Current Id: 100A
Drain Source On State Resistance: 0.015ohm
On Resistance Rds(on): 0.015ohm
Transistor Case Style: TO-3P
Transistor Mounting: Through Hole
Rds(on) Test Voltage: 10V
Gate Source Threshold Voltage Max: 3.7V
Power Dissipation Pd: 797W
Power Dissipation: 797W
No. of Pins: 3Pins
Operating Temperature Max: 150°C

What’s in the box
1 x Power MOSFET