Wolfspeed (C2M0160120D) Silicon Carbide MOSFET, Single, N Channel, 19 A

Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.16 ohm, TO-247

Product Overview
The C2M0160120D is a 1.2kV N-channel enhancement mode silicon carbide Power MOSFET of high speed switching with low capacitances. The Z-FET™ MOSFET is ideal for high-frequency applications. The silicon carbide power MOSFET features higher system efficiency, reduced cooling requirements and increased system switching frequency.

High blocking voltage with low RDS (on)
Easy to parallel and simple to drive
Resistant to latch-up
Halogen-free

Applications
Power Management, Alternative Energy

Product Information

MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 19A
Transistor Polarity: N Channel
Drain Source Voltage Vds: 1.2kV
On Resistance Rds(on): 0.16ohm
Drain Source On State Resistance: 0.16ohm
Rds(on) Test Voltage: 20V
Transistor Case Style: TO-247
Gate Source Threshold Voltage Max: 2.6V
Power Dissipation Pd: 125W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Power Dissipation: 125W
Product Range: C2M

What’s in the box
1 x Silicon Carbide MOSFET