Silicon Carbide MOSFET, Single, N Channel, 23 A, 900 V, 0.12 ohm, TO-247
Product Information
MOSFET Module Configuration: Single
Channel Type: N Channel
Continuous Drain Current Id: 23A
Transistor Polarity: N Channel
Drain Source Voltage Vds: 900V
On Resistance Rds(on): 0.12ohm
Drain Source On State Resistance: 0.12ohm
Rds(on) Test Voltage: 15V
Transistor Case Style: TO-247
Gate Source Threshold Voltage Max: 2.1V
Power Dissipation Pd: 97W
No. of Pins: 3Pins
Operating Temperature Max: 150°C
Power Dissipation: 97W
Product Range: C2M
What’s in the box
1 x Silicon Carbide MOSFET
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